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 Ordering number : EN8642
2SK4043LS
N-Channel Silicon MOSFET
2SK4043LS
Features
* * *
General-Purpose Switching Device Applications
Low ON-resistance. 2.5V drive. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW10s, duty cycle1% Tc=25C Conditions Ratings 30 10 20 80 2.0 20 150 --55 to +150 147 20 Unit V V A A W W C C mJ A
Note : *1 VDD=10V, L=500H, IAV=20A *2 L500H, Single pulse
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0V VDS=30V, VGS=0V VGS= 8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=10A ID=10A, VGS=4V ID=10A, VGS=2.5V Ratings min 30 1 10 0.4 15 25 16 17 21 24 1.3 typ max Unit V
A A
V S m m
Marking : K4043
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1805QA MS IM TB-00001889 No.8642-1/4
2SK4043LS
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=15V, VGS=4V, ID=20A VDS=15V, VGS=4V, ID=20A VDS=15V, VGS=4V, ID=20A IS=20A, VGS=0V Ratings min typ 3000 360 300 27 190 370 280 37 3.9 12.6 1.0 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Package Dimensions unit : mm 7509-002
10.0 3.2 4.5 2.8
3.5
7.2 16.0
16.1
0.9 1.2 0.75
3.6
1.2
14.0
0.7
123
2.4
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS)
2.55
2.55
Switching Time Test Circuit
VIN 4V 0V VIN ID=10A RL=1.5 VDD=15V
0.6
Avalanche Resistance Test Circuit
L 50
D
PW=10s D.C.1%
VOUT
2SK4043LS
G
4V 0V
50
VDD
2SK4043LS P.G 50
S
No.8642-2/4
2SK4043LS
40
ID -- VDS
V 3 .0
2. 0V
25 C
1.0
Tc=25C
40 35 30 25 20 15
ID -- VGS
VDS=10V
75 C
2.0
35 30 25 20 15 10 5
2 .5
V
V
Drain Current, ID -- A
Drain Current, ID -- A
4 .0
1.5V
5
VGS=1.0V
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.5
Tc =
75 C
10
25 --25C C
1.5
Tc= --
V
25 C
3 .5
2.5 IT10262
Drain-to-Source Voltage, VDS -- V
40
IT10261 40
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Tc
ID=10A
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10
35 30 25 20 15 10 5 0 --50
Tc=75C 25C --25C
2.5V S= 0A, VG I D=1 =4.0V , VGS =10A ID
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
7
yfs -- ID
IT10263 7 5 3 2
Case Temperature, Tc -- C
IT10264
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
5 3 2
VDS=10V
10 7 5 3 2
Tc
-25 =-
C
75
Source Current, IS -- A
25
C
10 7 5 3 2 1.0 7 5 3 2
C
3 2 1.0 0.1 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 0 0.3
Tc=7 5
0.6
--25C
0.9
C 25C
0.1 7 5
1.2
1.5 IT10266
Drain Current, ID -- A
1000 7
IT10265 10000 7 5
SW Time -- ID
td (off)
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
5 3 2
VDD=15V VGS=4V
tf
Ciss, Coss, Crss -- pF
3 2
100 7 5 3 2
tr
1000 7 5 3 2
Coss
td(on)
Crss
10 0.1
100 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0 5 10 15 20 25 30 IT10268
Drain Current, ID -- A
IT10267
Drain-to-Source Voltage, VDS -- V
No.8642-3/4
2SK4043LS
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 35 40
VGS -- Qg
VDS=15V ID=20A
2 100 7 5
ASO
IDP=80A
10s
Gate-to-Source Voltage, VGS -- V
10
ID=20A
Drain Current, ID -- A
3 2 10 7 5 3 2 1.0 7 5 3 2
1m
DC
0 s
Operation in this area is limited by RDS(on).
ms 0m s op era tio n
10
10
s
0.1 0.1
Tc=25C Single pulse
2 3 5 7 1.0 2 3 5 7 10 2 3 5
Total Gate Charge, Qg -- nC
2.5
IT10286 25
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
IT10270
PD -- Tc
Allowable Power Dissipation, PD -- W
2.0
20
1.5
15
1.0
10
0.5
5
0 0 20 40 60 80 100 120 140 160
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT10271
Case Temperature, Tc -- C
IT10272
Note on usage : Since the 2SK4043LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice.
PS No.8642-4/4


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